Atom NanoElectronics provides the next generation display and device technology with pure semiconducting nanomaterials.

Atom NanoElectronics | 440 Hindry Avenue, Unit E, Los Angeles CA 90301 | Tel: 310-641-1338, Fax: 310-641-1338 

Copyright © 2017 Atom NanoElectronics. All rights reserved.

News


  • May 24, 2017: Presented at SID Week 2017, Los Angeles CA.
  • May 11, 2017: Article "Gate-Tunable Electron Injection Based Organic Light-Emitting Diodes for Low Cost and Low Voltage Active Matrix Displays" Published in ACS Applied Materials & Interfaces.   DOI: 10.1021/acsami.7b04035.
  • April 24, 2017: Article "Study of White Electroluminescence from a Single-Component Polymer Using an Electrolyte-Gated Diode" Published in ACS Applied Materials & Interfaces.   DOI: 10.1021/acs.jpcc.7b02505.
  • April 21, 2017: Presented at MRS 2017 Spring Meeting, Phoenix AZ.
  • March 3, 2017: Article "Electrolyte Gated Red, Green, and Blue Organic Light-Emitting Diodes" Published in ACS Applied Materials & Interfaces.   DOI: 10.1021/acsami.7b00463.
  • November 30, 2016: Presented at MRS 2016 Fall Meeting, Boston MA. 
  • November 29, 2016: Awarded from US DOD SOCCOM contract on Transparent Emissive Microdisplay (Contract#: H92222-17-P-0006). 
  • November 29, 2016: Exhibited at MRS Innovation 2016 Fall, Boston MA.  
  • August 8, 2016: Article "Electrolyte Gated  Polymer Light-Emitting Transistor" Accepted as VIP paper by Advanced Materials Technologies.  
  • August 5, 2016: Article "Electronically Pure Single-Chirality Semiconducting Single-Walled Carbon Nanotube for Large-Scale Electronic Devices" Published in ACS Applied Materials & Interfaces.   DOI: 10.1021/acsami.6b06647.
  • August 5, 2016: Article "The Effect of Interface States on Single-Walled Carbon Nanotube Transistors" Published in ECS Journal of Solid State Science and Technology.   DOI: 10.1149/2.0271609jss.
  • August 3, 2016: Article "Polyfluorinated Electrolyte for Fully Printed Carbon Nanotube Electronics" Published in Advanced Functional Materials.   DOI: 10.1002/adfm.201601605.
  • May 24-26, 2016: Exhibited at SID 2016 I-ZONE, San Francisco, CA.
  • May 24, 2016: Presented at Nanotech 2016, Washington DC.
  • May 23, 2016: Presented at SID 2016 Business Conference, San Francisco, CA.
  • March 2, 2016: Presented at FlexTech 2016, Monterey, CA.
  • November 18-19, 2015: Exhibited at Printed Electronics USA 2015, Santa Clara, CA.
  • November 17, 2015: Presented at Optomec User Group Meeting, Santa Clara, CA.
  • August 1, 2015:  Fabricated CNT TFTs with ION/IOFF ratio of 10^8 for both n-Type and p-Type transfer characteristics.
  • July 29, 2015:  Was Awarded US Air Force STTR contract (Contract # FA8750-15-C-0258). 
  • June 4, 2015:  Presented our research at SID 2015 Business Conference, San Jose, CA.
  • November 25, 2014:  Developed Active Matrix Light Emitting Display Module with Fully-Printed (6,5) Single-walled Carbon Nanotube Control Circuits.
  • Dr. Tang was interviewed by IDTechEx at Printed Electronics USA 2014 (https://www.youtube.com/watch?v=oDcQKZFoH2w).
  • November 19-20, 2014:  Exhibited our products and technologies at Booth P20 at Printed Electronics USA 2014, Santa Clara, CA.
  • May 20, 2014:  Was Awarded NSF SBIR Phase IB (Proposal ID: 1442835).
  • February 21, 2014:  Fabricated the first fully printed single CNTFET pixel backplane. 
  • December 13, 2013:  Was Awarded NSF SBIR Phase I to develop fully-printed single-walled carbon nanotube transistor backplanes (Proposal ID: 1344904). 
  • November 29, 2013:  Developed highly conductive p-Type doped arc-discharge single-walled carbon nanotubes (around 40 Ohms/sq) for ammonia sensing.
  • October 28, 2013:  Developed a novel type of printable gate dielectric materials with ultra-high capacitance. More importantly, this gate material can withstand high temperature and high pressure, comparable to inorganic oxides.

Atom NanoElectronics Inc. is now the exclusively licensed entity to manufacture, distribute and sell HiPco™ materials.

HiPco™ carbon nanotubes are available in kg quantities for research and development.